Highly Conformal Hafnium Silicate Film Growth by Atomic-Layer Chemical Vapor Deposition using a New Combination of Precursors: Hf(OC(CH3)3)4 and Si(N(CH3)(C2H5))4

スポンサーリンク

概要

• 論文の詳細を見る

• Highly conformal hafnium silicate films were deposited by atomic-layer chemical vapor deposition (ALCVD) using a new combination of precursors: hafnium tetra-tert-butoxide [Hf(OC(CH3)3)4] and tetrakis-ethylmethylaminosilane [Si(N(CH3)(C2H5))4]. The self-limiting nature of ALCVD film growth was demonstrated by showing the convergent growth rate at high concentrations of the precursors. The growth rate was 3.8 Å/cycle at 220 °C, which was relatively high compared with results using other precursors. It was also shown that we could control the $\text{Hf}/(\text{Hf}+\text{Si})$ composition ratio in the high $\text{Hf}/(\text{Hf}+\text{Si})$ ratio region. The carbon impurity concentrations of the films made were lower than the X-ray photoelectron spectroscopy (XPS) detection limit (${<}1$ at. %). Hafnium silicate films with ${\sim}80$% HfO2 were amorphous up to 700 °C. The hafnium silicate films deposited at 220 °C have an average dielectric constant of 9.8 with a flatband voltage ($V_{\text{fb}}$) and a hysteresis voltage in capacitance–voltage ($C$–$V$) measurements of 0 V and less than 0.18 V, respectively.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-06-15

著者

• Kim Jaehyun

  Electrical And Computer Engineering Division Department Of Chemical Engineering Pohang University Of

• Yong Kijung

  Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University

• Yong Kijung

  Electrical And Computer Engineering Division Department Of Chemical Engineering Pohang University Of

関連論文

• Growth and Characterization of Hf–Silicate/Al2O3 Gate Stacks Grown on Si(100) by Self-Limiting Atomic Layer Deposition
• Highly Conformal Hafnium Silicate Film Growth by Atomic-Layer Chemical Vapor Deposition using a New Combination of Precursors: Hf(OC(CH3)3)4 and Si(N(CH3)(C2H5))4
• Architecture Design of Modeling & Simulation Software for Military Search and Rescue System(ICSANE 2012 (International Conference on Space, Aeronautical and Navigational Electronics))

スポンサーリンク