Growth and Characterization of Hf–Silicate/Al2O3 Gate Stacks Grown on Si(100) by Self-Limiting Atomic Layer Deposition

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概要

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• A thin film structure of a HfSixOy/Al2O3/Si gate stack was fabricated on Si(100) by self-limiting atomic layer chemical vapor deposition (ALCVD). An atomically flat interface of Al2O3/silicon was observed and the impurity concentrations in the bulk film were below the XPS detection limit. Hf–silicate (HfSixOy) film was deposited using tetrakis-diethylamido-hafnium [Hf(N(C2H5)2)4] and tetra-$n$-butyl-orthosilicate [Si(OC4H9)4]. The grown Hf–silicate film showed a Si-rich composition (${\sim}30$% HfO2), whereas an Al2O3 layer showed a stoichiometric composition ratio of O/Al. The electrical properties of the gate stack were characterized using capacitance–voltage ($C$–$V$) and current–voltage ($I$–$V$) measurements of the metal–oxide–metal (MIM) structure. The dielectric constant ($k\sim 10.5$) of the HfSixOy/Al2O3 film was higher than that ($k\sim 8.1$) of an Al2O3 single layer of a similar thickness. Rapid thermal annealing (RTA)-treated HfSixOy/Al2O3 films showed a positive shift in flat band voltage ($V_{\text{fb}}$), whereas as-deposited samples did not show positive shifts in $V_{\text{FB}}$. The leakage current densities ($J_{\text{g}}$) of the as-grown and the annealed HfSixOy/Al2O3 films were both below $1\times 10^{-7}$ A/cm2 at a bias of $-1.0$ V.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-09-15

著者

• Kim Jaehyun

  Electrical And Computer Engineering Division Department Of Chemical Engineering Pohang University Of

• Lee Seungjai

  Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University

• Yong Kijung

  Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University

• Lee Seungjai

  Electrical And Computer Engineering Division Department Of Chemical Engineering Pohang University Of

• Yong Kijung

  Electrical And Computer Engineering Division Department Of Chemical Engineering Pohang University Of

• Yong Kijung

  Electrical And Computer Engineering Division Department Of Chemical Engineering Pohang University Of

関連論文

• Growth and Characterization of Hf–Silicate/Al2O3 Gate Stacks Grown on Si(100) by Self-Limiting Atomic Layer Deposition
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