A Comparison of Defect States in Tantalum Pentoxide (Ta_2O_5) Films after Rapid Thermal Annealing in O_2 or N_2O by Zero-Bias Thermally Stimulated Current Spectroscopy

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• Sandler N.

  Lam Research Corporation Cvd Division

• LAU W.

  Department of Paediatrics & Adolescent Medicine, Faculty of Medicine, The University of Hong Kong

• KHAW K.

  Department of Electrical Engineering, National University of Singapore

• Khaw K.

  Department Of Electrical Engineering National University Of Singapore

• Lau W.

  Department Of Chemical Engineering National Universityt Of Singapore

• Lau W.

  Department Of Electrical Engineering National University Of Singapore

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• Use of developmental language scales in Chinese children
• A Comparison of Defect States in Tantalum Pentoxide (Ta_2O_5) Films after Rapid Thermal Annealing in O_2 or N_2O by Zero-Bias Thermally Stimulated Current Spectroscopy
• Confirmation of the Correlation between the Electrical Hysteresis and Silicon Dangling Bond Density in Silicon Nitride by UV Irradiation of Nearly Hysteresis Free Metal-Nitride-Silicon Capacitors
• SIMULATION OF AN INTERNALLY MULTI-STAGED PERMEATION MODULE OPERATING WITH COCURRENT FLOW PATTERN
• The Identification and Suppression of Defects Responsible for Electrical Hysteresis in Metal-Nitride-Silicon Capacitors

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