Confirmation of the Correlation between the Electrical Hysteresis and Silicon Dangling Bond Density in Silicon Nitride by UV Irradiation of Nearly Hysteresis Free Metal-Nitride-Silicon Capacitors

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概要

• 論文の詳細を見る

• Previously, Lau [W. S. Law: Jpn. J. Appl. Phys. 29 (1990) L690] has pointed out that part of the hysteresis ΔV_+ in MNS (Metal-Nitride-Silicon) capacitors is correlated to the spin density measured by electron spin resonance and the other part of the hysteresis ΔV_- is correlated to defects close to the nitride/silicon interface. The spin density was thought to originate from silicon dangling bonds in the silicon nitride. 254 nm ultraviolet irradiation, which was known to be capable of producing silicon dangling bonds in silicon nitride, was found to induce a large ΔV_+ in nearly hysteresis free MNS (Metal-Nitride-Silicon) capacitors, thus confirming that ΔV_+ is correlated to silicon dangling bonds.

• 社団法人応用物理学会の論文
• 1991-12-01

著者

• Lau W.

  Department Of Chemical Engineering National Universityt Of Singapore

• GOO C.

  Department of Electrical Engineering, National University of Singapore

• Goo C.

  Department Of Electrical Engineering National University Of Singapore

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