Fabrication of a Si Nanometer Column pn Junction and Implanted Damage Evaluation by TEM
スポンサーリンク
概要
- 論文の詳細を見る
- 1995-08-21
著者
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Shingubara S.
Graduate School Of Adsm Hiroshima University
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Sakaue H.
Graduate School Of Adsm Hiroshima University
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Takahagi T.
Graduate School Of Adsm Hiroshima University
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SAKAUE H.
Hiroshima University, Graduate School of ADSM
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SHINGUBARA S.
Hiroshima University, Graduate School of ADSM
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TAKAHAGI T.
Hiroshima University, Graduate School of ADSM
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SUKESAKO H.
Hiroshima University, Dept. of Electrical Engineering
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INOUE K.
Hiroshima University, Dept. of Electrical Engineering
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KAWASAKI T.
Hiroshima University, Dept. of Electrical Engineering
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HORIIKE Y.
Toyo University, Dept. of Electrical Engineering
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Horiike Y.
Toyo University Dept. Of Electrical Engineering
関連論文
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- Investigation of Interconnect Temperature Rise due to Joule Heating and Its Effect on Electromigration Reliability
- Wafer-Scale Self-Organization of Periodic Step/Terrace Structure on Hydrogen-Terminated Si Surface
- Scanning Tunneling Microscopy Observation on the Atomic Structures of Step Edges and Etch Pits on NH_4F-Treated Si(111) Surface
- In-Situ Observation of Silicide Formation on Hydrogen-Terminated Si Surface by UHV-STM and LEED
- Fabrication of a Si Nanometer Column pn Junction and Implanted Damage Evaluation by TEM