Investigation of Interconnect Temperature Rise due to Joule Heating and Its Effect on Electromigration Reliability

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• Shingubara S.

  Graduate School Of Adsm Hiroshima University

• Sakaue H.

  Graduate School Of Adsm Hiroshima University

• Takahagi T.

  Graduate School Of Adsm Hiroshima University

• MIYAZAKI S.

  Hiroshima University, Graduate School of ADSM

• SAKAUE H.

  Hiroshima University, Graduate School of ADSM

• SHINGUBARA S.

  Hiroshima University, Graduate School of ADSM

• TAKAHAGI T.

  Hiroshima University, Graduate School of ADSM

関連論文

• Al-Selective CVD Induced by Hydrogen Desorption on Si
• Large Negative Resistance Property Observed in 3-D Network of DNA and Gold Nanoparticle Formed by DNA Mediated Self-organization
• Investigation of Interconnect Temperature Rise due to Joule Heating and Its Effect on Electromigration Reliability
• Wafer-Scale Self-Organization of Periodic Step/Terrace Structure on Hydrogen-Terminated Si Surface
• Scanning Tunneling Microscopy Observation on the Atomic Structures of Step Edges and Etch Pits on NH_4F-Treated Si(111) Surface
• In-Situ Observation of Silicide Formation on Hydrogen-Terminated Si Surface by UHV-STM and LEED
• Fabrication of a Si Nanometer Column pn Junction and Implanted Damage Evaluation by TEM

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