Low-Voltage and Power CMOS Technology
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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KAKUMU Masakazu
Semiconductor Device Engineering Laboratory, Toshiba Corporation
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Kakumu M
Toshiba Corp. Kawasaki‐shi Jpn
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Kakumu Masakazu
Semiconductor Device Engineering Laboratory Toshiba Corporation
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Oyamatsu Hisato
Ulsi Device Engineering Laboratory Toshiba Corporation
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Oyamatsu H
Faculty Of Science Osaka University
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KINUGAWA Masaaki
ULSI Device Engineering Laboratory, Toshiba Corporation
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KINUGAWA Masaaki
Semiconductor Device Engineering Laboratory, Toshiba Corporation
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ISHIMARU Kazunari
Semiconductor Device Engineering Laboratory, Toshiba Corporation
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OYAMATSU Hisato
Semiconductor Device Engineering Laboratory, Toshiba Corporation
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Kinugawa Masaaki
Ulsi Device Engineering Laboratory Toshiba Corporation
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Ishimaru Kazunari
Semiconductor Device Engineering Laboratory Toshiba Corporation
関連論文
- Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
- Design Methodology of Deep Submicron CMOS Devices for 1 V Operation (Special Issue on Low-Power LSI Technologies)
- Low-Voltage and Power CMOS Technology
- X-Ray Diffraction Study on Symmethry of β-Mn Structure
- Process and Device Technologies of CMOS Devices for Low-Voltage Operation (Special Section on Low-Power and Low-Voltage Integrated Circuits)