Ultra-Low Standby Current in SOI-CMOS LSI Circuits by Using Body-Bias-Control Technology
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Adan A.
Ic Development Group Sharp Corp.
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Ohmi T.
Department Of Electronic Eng. Graduate School Of Eng. Tohoku University
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HIGASHI K.
IC Development Group, SHARP Corp.
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MORIMOTO H.
IC Development Group, SHARP Corp.
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NIIMI K.
IC Development Group, SHARP Corp.
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ASHIDA T.
IC Development Group, SHARP Corp.
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SUGAWA S.
Department of Electronic Eng., Graduate School of Eng., Tohoku University
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Sugawa S.
Department Of Electronic Eng. Graduate School Of Eng. Tohoku University
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Ashida T.
Ic Development Group Sharp Corp.
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Niimi K.
Ic Development Group Sharp Corp.
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- The Cleaning of Particle and Metallic Impurity on Si Wafer Surface by Fluorine Etchant
- Ultra-Low Standby Current in SOI-CMOS LSI Circuits by Using Body-Bias-Control Technology
- Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low Energy Ion Bombardment Process