Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low Energy Ion Bombardment Process
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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Ohmi T.
Department Of Electronic Eng. Graduate School Of Eng. Tohoku University
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Ohmi T.
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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KUMAMI H.
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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SHINDO W.
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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INO K.
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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Kumami H.
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Ino K.
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
関連論文
- Formation Process of Highly Reliable Ultra-Thin Gate Oxide
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- Ultra-Low Standby Current in SOI-CMOS LSI Circuits by Using Body-Bias-Control Technology
- Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low Energy Ion Bombardment Process