Edge Direct Tunneling (EDT) Induced Drain and Gate Leakage in Ultrathin Gate Oxide MOSFETs
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Huang H.
Department of Electrical and Electronic Engineering The Hong Kong University of Science and Technolo
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CHEN M.
Department of Electrical and Electronic Engineering, Gifu University
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Yang K.
Department of Aerospace and Mechanical Engineering University of Notre Dame
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Yu M.
R/d Department Taiwan Semiconductor Manufacturing Company
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LIN Y.
R/D Department, Taiwan Semiconductor Manufacturing Company
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JANG S.
R/D Department, Taiwan Semiconductor Manufacturing Company
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YU C.
R/D Department, Taiwan Semiconductor Manufacturing Company
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LIANG M.
R/D Department, Taiwan Semiconductor Manufacturing Company
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Lin Y.
R/d Department Taiwan Semiconductor Manufacturing Company
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Yu C.
R/d Department Taiwan Semiconductor Manufacturing Company
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Liang M.
R/d Department Taiwan Semiconductor Manufacturing Company
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Chen M.
Department Of Electrical And Electronic Engineering Gifu University
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