Excimer Laser Annealing of PbZr0.4 Ti0.6O3 Thin Film at Low Temperature for TFT FeRAM Application (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))

元データ 2005-06-23 社団法人電子情報通信学会

概要

In this study, we successfully produced PbZr_<0.4>Ti_<0.6>O_3 (PZT) thin films with high crystallinity and high remnant polarization (Pr) at low process temperatures using pulsed excimer (XeCl) laser irradiation. The amorphous PZT films were annealed at 550℃ for 10min to initiate the nucleation of the PZT perovskite phase, and then annealed with an excimer laser heating at 400℃. X-ray diffraction (XRD) patterns show that 150-230mJ/cm^2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase, and Field emission SEM (FESEM) photographs show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.

著者

Kwon J. Samsung Advanced Institute of Technology (SAIT)
Cho H. Samsung Advanced Institute of Technology (SAIT)
Yin H. Samsung Advanced Institute of Technology (SAIT)
Xianyu W. Samsung Advanced Institute of Technology (SAIT)
Xianyu W. Advanced Institute Of Technology
Cho H. Advanced Institute Of Technology
KWON J. Advanced Institute of Technology
YIN H. Advanced Institute of Technology
NOGUCHI T. Advanced Institute of Technology
野口 隆 Samsung Advanced Institute Of Technology (sait):sungkyunkwan University (skku)

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