Excimer Laser Annealing of PbZr0.4 Ti0.6O3 Thin Film at Low Temperature for TFT FeRAM Application (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))

概要

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In this study, we successfully produced PbZr_<0.4>Ti_<0.6>O_3 (PZT) thin films with high crystallinity and high remnant polarization (Pr) at low process temperatures using pulsed excimer (XeCl) laser irradiation. The amorphous PZT films were annealed at 550℃ for 10min to initiate the nucleation of the PZT perovskite phase, and then annealed with an excimer laser heating at 400℃. X-ray diffraction (XRD) patterns show that 150-230mJ/cm^2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase, and Field emission SEM (FESEM) photographs show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number.
社団法人電子情報通信学会の論文
2005-06-23