超純水表面処理による高濃度リンドープシリコン表面のモフォロジー変化

概要

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The morphologies of Si(100) (SI) and heavily P-doped Si(100) (CI) were changed enormously by dipping in ultrapure water at 60°C or 100°C, which was revealed by atomic force microscope (AFM). The dipping at 100°C changed the flat surface of SI into very rough one with grains all over the surface. The surface of CI dipped in 60°C water became rough one similar to the SI surface dipped in 100°C water. On the other hand, after dipping CI in 100°C water, the CI surface was still smooth. This result implies that uniform etching was occurred in this case. In consequence, both oxidation and etching should occur competitively when silicon surface was dipped into the hot water. The X-ray photoelectron spectroscopy (XPS) results showed that the rough surfaces with grains exhibited the SiO2 component. Thus, the SiO2-unclei grown to extended size would prevent the surface from etching, which made the smooth surface rough.
日本真空協会の論文
2005-03-20