Effect of near-threshold ionization on electron attachment in gaseous dielectrics

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概要

• 論文の詳細を見る

• It has been predicted that near-threshold ionization (NTI) in a gaseous dielectric inhibits the development of electron avalanche when the gaseous dielectric has a sufficient capability for low-energy electron attachment. The NTI leaves little energy for the primary and secondary electrons involved in the ionization; thus, both electrons can be captured by dielectric gas molecules without further ionization. A computational estimation indicates that this process can occur in SF6.

• 物理系学術誌刊行協会出版 (The Institute of Pure and Applied Physics)の論文
• 2004-11-15

著者

• Sugawara Hirotake

  Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkai

• SAKAI Yosuke

  Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokk

• ISHIGAKI Takuya

  Division of Electronics and Information Engineering, Graduate School of Engineering, Hokkaido Univer

• HIROCHI Yuuki

  Division of Electronics and Information Engineering, Graduate School of Engineering, Hokkaido Univer

• Hirochi Yuuki

  Division Of Electronics And Information Engineering Graduate School Of Engineering Hokkaido Universi

• Ishigaki Takuya

  Division Of Electronics And Information Engineering Graduate School Of Engineering Hokkaido Universi

• Sakai Yosuke

  Division Of Electronics For Informatics Graduate School Of Information Science And Technology Hokkai

• Sakai Yosuke

  Division of Electronics and Information Engineering, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan

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• Enhancement of Nitrogen Gas Breakdown Voltage between Coated Aluminum Electrodes with Fluorocarbon Polymer Film Prepared in C8F18 Vapor RF Plasma

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