Design and Characteristics of Polysilicon Emitter Bipolar Junction Transistors

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概要

• 論文の詳細を見る

• Through the aid of empirical equations, a process simulator and a device simulator, a polysilicon (p-Si) emitter bipolar junction transistor (PEBJT) suitable for mass-production has been designed, fabricated, and characterized. The device with an emitter size of 5 μm $\times$ 9 μm has more than 1 order flatness of $h_{\text{FE}}$ vs. IC, and has more than 4 orders flatness with an emitter size of 9 μm $\times$ 9 μm The ideality factors of the collector current are around 1 for the operating temperature ranging from 24°C to 125°C, with base to emitter applied voltage = 0.4–0.5.

• Japan Society of Applied Physicsの論文
• 2003-10-15

著者

• Shih Neng-fu

  Department Of Electrical Engineering Hsiuping Institute Of Technology

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