Study of Depth Distribution Shift of Copper on Silicon Wafer Surface Using Total Reflection X-Ray Fluorescence Spectrometry
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概要
- 論文の詳細を見る
- 1996-04-10
著者
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Mori Yoshihiro
Advanced Technology Research Laboratories Nippon Steel Corporation
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Mori Yoshihiro
Advanced Materials And Technology Research Laboratories Nippon Steel Corporation C/o Nsc Electron Co
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SHIMANOE Kengo
Advanced Technology Research Laboratories, Nippon Steel Corporation, c/o NSC Electron Corporation
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Shimanoe Kengo
Advanced Materials & Technology Research Laboratories Nippon Steel Corporation
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Shimanoe Kengo
Advanced Technology Research Laboratories Nippon Steel Corporation
関連論文
- Accuracy of Total Reflection X-Ray Fluorescence Spectrometry near the Detection Limit
- Study of Depth Distribution Shift of Copper on Silicon Wafer Surface Using Total Reflection X-Ray Fluorescence Spectrometry
- Anodic Oxides on Hg_Cd_xTe Studied Using Angle and X-Ray Power-Dependent X-Ray Photoelectron Spectroscopy
- Electrical Properties of Langmuir-Blodgett Passivation Film for Hg_Cd_xTe
- Hg_Cd_xTe Surface after Chemical Etching and Electrochemical Reduction
- Multi-batch Preparation of Standard Samples from a Single Doped Solution for Cross-checking in Surface Metal Analyses of Silicon Wafers
- Standard Sample Preparation for the Analysis of Several Metals on Silicon Wafer