Standard Sample Preparation for the Analysis of Several Metals on Silicon Wafer

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概要

• 論文の詳細を見る
• 1996-02-10

著者

• Mori Yoshihiro

  Advanced Materials And Technology Research Laboratories Nippon Steel Corporation C/o Nsc Electron Co

• Shimanoe Kengo

  Advanced Materials & Technology Research Laboratories Nippon Steel Corporation

関連論文

• Accuracy of Total Reflection X-Ray Fluorescence Spectrometry near the Detection Limit
• Study of Depth Distribution Shift of Copper on Silicon Wafer Surface Using Total Reflection X-Ray Fluorescence Spectrometry
• Anodic Oxides on Hg_Cd_xTe Studied Using Angle and X-Ray Power-Dependent X-Ray Photoelectron Spectroscopy
• Electrical Properties of Langmuir-Blodgett Passivation Film for Hg_Cd_xTe
• Hg_Cd_xTe Surface after Chemical Etching and Electrochemical Reduction
• Multi-batch Preparation of Standard Samples from a Single Doped Solution for Cross-checking in Surface Metal Analyses of Silicon Wafers
• Standard Sample Preparation for the Analysis of Several Metals on Silicon Wafer

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