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VLSI Development Laboratories, IC Group, Sharp Corporation | 論文
- In Situ Rapid Thermal Nitridation of Collimated Titanium by Physical Vapor Deposition as a Blanket Tungsten Barrier
- Charge Dissipation on Chemically Treated Thin Silicon Oxide in Air
- Potentiometry Combined with Atomic Force Microscope
- High-Temperature Etching of PZT/Pt/TiN Structure by High-Density ECR Plasma
- Suppression of Microloading Effect by Low-Temperature SiO_2 Etching
- Dissipation of Contact Electrified Electrons on Dielectric Thin films with Silicon Substrate
- Advanced Ti Silicide Technology with Buffer Thin Al Layer
- A Flash Memory Technology for Operating Voltage Reduction and Self-Convergence of the Over Erased Cells