Suppression of Microloading Effect by Low-Temperature SiO_2 Etching
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-12-30
著者
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SAKIYAMA Keizo
VLSI Development Laboratories, IC Group, Sharp Corporation
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Uda Keichiro
Vlsi Development Laboratories Ic-group Sharp Corporation
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Sakiyama Keizo
Vlsi Development Laboratories Ic Group Sharp Corporation
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Sakiyama Keizo
Vlsi Development Laboratories Ic-group Sharp Corporation
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SATO Masayuki
VLSI Development Laboratories, IC-Group, SHARP Corporation
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TAKEHARA Daisuke
VLSI Development Laboratories, IC-Group, SHARP Corporation
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HARA Tohru
Department of Electrical Engineering, Hosei University
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Hara Tohru
Department Of Electrical Engineering Hosei University
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Takehara Daisuke
Vlsi Development Laboratories Ic-group Sharp Corporation
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Sato Masayuki
Vlsi Development Laboratories Ic-group Sharp Corporation
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- High-Temperature Etching of PZT/Pt/TiN Structure by High-Density ECR Plasma
- Suppression of Microloading Effect by Low-Temperature SiO_2 Etching
- A Novel NOR Virtual-Ground Array Architecture for High Density Flash
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