FN Program Technology of Sector Erasable Flash Memory with Conventional 2-Layer Poly Silicon ETOX Cell Structure
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Sakiyama Keizo
Vlsi Development Laboratories Ic Group Sharp Corporation
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Sakiyama Keizo
Vlsi Development Laboratories Ic Tenri Group Sharp Corporation
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Tanigami Takuji
Vlsi Development Laboratories Ic Tenri Group Sharp Corporation
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Iguchi Katsuji
Vlsi Development Laboratories Ic Tenri Group Sharp Corporation
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SHINMURA Naoyuki
VLSI Development Laboratories, IC Tenri Group, SHARP Corporation
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HAKOZAKI Kenji
VLSI Development Laboratories, IC Tenri Group, SHARP Corporation
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AKIYAMA Yukiharu
VLSI Development Laboratories, IC Tenri Group, SHARP Corporation
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SATO Shinichi
VLSI Development Laboratories, IC Tenri Group, SHARP Corporation
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Akiyama Yukiharu
Vlsi Development Laboratories Ic Tenri Group Sharp Corporation
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Hakozaki Kenji
Vlsi Development Laboratories Ic Tenri Group Sharp Corporation
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Shinmura Naoyuki
Vlsi Development Laboratories Ic Tenri Group Sharp Corporation
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Sato Shinichi
Vlsi Development Laboratories Ic Tenri Group Sharp Corporation
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- A Novel NOR Virtual-Ground Array Architecture for High Density Flash
- FN Program Technology of Sector Erasable Flash Memory with Conventional 2-Layer Poly Silicon ETOX Cell Structure