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United Microelectronics Corporation, Hsinchu 300, Taiwan | 論文

• Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect Transistors
• Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal–Oxide–Semiconductor Transistors
• Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect
• Characterization of RF Lateral-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors with Different Layout Structures

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