スポンサーリンク
Tsukuba Laboratory Taiyo Nippon Sanso Corporation | 論文
- Effects of High-k Passivation Films on AlGaN/GaN HEMT
- p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
- High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
- High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
- Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs
- Etching of High-k Dielectric HfO2 Films in BCl3-Containing Plasmas Enhanced with O2 Addition
- Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN High Electron Mobility Transistors
- High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO2/SiN Gate Insulator
- p-Type InGaN Cap Layer for Normally Off Operation in AlGaN/GaN Heterojunction Field Effect Transistors