スポンサーリンク
Transcom, Inc. | 論文
- S-Band 38dBm Power Amplifier Using PHEMT and FR4 Substrate
- Novel In_Al_As/In_xGa_As Metamorphic δ-HEMT's on GaAs Substrate with Various Channel Designs
- Analytic Modeling for Drain-Induced Barrier Lowering Phenomenon of the InGaP/InGaAs/GaAs Pseudomorphic Doped-Channel Field-Effect Transistor
- S-Band 38dBm Power Amplifier Using PHEMT and FR4 Substrate
- Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As Inverse Composite Channel Metamorphic High Electron Mobility Transistor