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Toray Res. Center Inc. Shiga Jpn | 論文

• Stress Characterization of Si by a Scanning Near-Field Optical Raman Microscope with Spatial Resolution and with Penetration Depth at the Nanometer Level, using Resonant Raman Scattering
• Characterization of Crystalline Defects and Stress in Shallow Trench Isolation by Cathodoluminescence and Raman Spectroscopies
• Depth Profile Analysis of Plasma-cured Multi Layer Resist
• Stress Characterization of Si by a Scanning Near-Field Optical Raman Microscope with Spatial Resolution and with Penetration Depth at the Nanometer Level, using Resonant Raman Scattering
• Microscopic Degradation Mechanisms in Silicon Photovoltaic Module under Long-Term Environmental Exposure
• Study of Peeling at Doped NiSi/SiO2 Interface

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