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Tokyo Institute of Technology, Department of Physical Electronics | 論文
- CS-4-6 LIPOPOLYMERS AS SENSING MATERIALS AND SENSING MATERIAL SUPPORTS FOR QCM ODOR SENSORS
- Analysis of Step Voltages in Single Electron Tunneling Devices Using Organic Thin Films
- Model for Localized States Distributuon and Light Dependent Effects in Amorphous Silicon Solar Cells
- Minority Carrier Diffusion Length in Amorphous Si Schottky Barrier Solar Cells
- Photovoltaic Properties of a・Si-F-H and a・Si-h Prepared by DC Glow Discharge : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
- Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n^+-Source
- Erratum: “InP/InGaAs Composite Metal--Oxide--Semiconductor Field-Effect Transistors with Regrown Source and Al2O3 Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm”
- High-Performance Hydrogenated Amorphous Silicon-Germanium Solar Cells Fabricated by Photochemical Vapor Deposition
- Fabrication of InP/InGaAs DHBTs with Buried SiO_2 Wires
- Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode
- C-12-21 Crossing Transmission Line Modeling Using Two-port Measurements