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The Institute of Physical and Chemical Research Wako | 論文
- Growth-Temperature Dependence of the Quality of Al_2O_3 Prepared by Sequential Surface Chemical Reaction of Trimethylaluminum and H_2O_2
- Growth of epitaxial TiN thin film on Si substrate by pulsed laser deposition(II)
- Growth of epitaxial TiN thin film on Si substrate by pulsed laser deposition(I)
- Rapid Formation of Arsenic-Doped Layer More Than 1.0 μm Deep in Si Using Two KrF Excimer Lasers
- Bi-Level Structures for Focused Ion Beam Using Maskless Ion Etching
- Generation of High-Current Photoelectrons Using a Subpicosecond Ultraviolet Laser