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THOMSON-CSF, Laboratoire Central de Recherches | 論文
- A Simple Model and Calculation of the Influence of Doping and Intrinsic Concentrations on the Interstitial-Substitutional Diffusion Mechanism : Application to Zn and Cd in InP
- Use of In-Zn-As Ternary Sources for the Diffusion of Zn in GaAs by the Semiclosed-Box Method
- The Temperature-Dependent Diffusion Mechanisum of Zn in InP Using the Semicolosed Diffusion Method
- Defect Filtering in GaAs on Si by Conformal Growth