Defect Filtering in GaAs on Si by Conformal Growth

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概要

• 論文の詳細を見る

• Using a newly developed technique of conformal growth, we show that low defect density GaAs films can be obtained from MBE or MOVPE GaAs-coated Si heterostructures. The defect characterization of the conformally grown films has been carried out using transmission electron microscopy and chemical etching. For the first time dislocation densities below 10^5/cm^2 have been observed in submicron GaAs films grown on Si by vapor phase epitaxy.

• 社団法人応用物理学会の論文
• 1991-03-15

著者

• Collet C.

  Thomson-csf Laboratoire Central De Recherches

• Dupuy M.

  Leti

• Pribat D.

  THOMSON-CSF, Laboratoire Central de Recherches

• Provendier V.

  THOMSON-CSF, Laboratoire Central de Recherches

• Legagneux P.

  CPM, BP 85X, Centre d'Etudes Nucleaires

• Pribat D.

  Thomson Csf. Laboratoire Central De Recherches Domaine De Corbeville

• Provendier V.

  Thomson-csf Laboratoire Central De Recherches:(present Address)e.n.s.m.p. Centres Des Materiaux Pierre-marie Fourt

• Legagneux P.

  Cpm Bp 85x Centre D'etudes Nucleaires

関連論文

• Defect Filtering in GaAs on Si by Conformal Growth
• Structural Characterizations of Conformally Grown (100) Si Films

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