Structural Characterizations of Conformally Grown (100) Si Films

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概要

• 論文の詳細を見る

• The defect structure of conformally grown Si films is investigated using electron microscopy techniques. Twins, stacking faults and dislocations are evidenced, mainly located at the different Si/SiO_2 interfaces. A qualitative model of defect generation is presented which suggests that these different defects mainly originate from differential thermal expansion problems associated to the "micro-roughness" of the Si /SiO_2 lateral interfaces.

• 社団法人応用物理学会の論文
• 1990-11-20

著者

• Dupuy M

  Centre D'etudes Nucleaires Grenoble Fra

• Dupuy M.

  Leti

• Pribat D.

  Thomson Csf. Laboratoire Central De Recherches Domaine De Corbeville

• CHAZELAS J.

  Thomson CSF. Laboratoire Central de Recherches, Domaine de Corbeville

• Chazelas J.

  Thomson Csf. Laboratoire Central De Recherches Domaine De Corbeville:(present Address) Thomson Csf Rcm

関連論文

• Defect Filtering in GaAs on Si by Conformal Growth
• Structural Characterizations of Conformally Grown (100) Si Films

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