スポンサーリンク
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST) | 論文
- High Magnetoresistance Ratio and Low Resistance-Area Product in Magnetic Tunnel Junctions with Perpendicularly Magnetized Electrodes
- Tunnel Magnetoresistance above 170% and Resistance--Area Product of 1 $\Omega$ (μm)2 Attained by In situ Annealing of Ultra-Thin MgO Tunnel Barrier
- Origin of Very Low Effective Barrier Height in Magnetic Tunnel Junctions with a Semiconductor GaOx Tunnel Barrier
- Spin Accumulation and Spin Lifetime in p-Type Germanium at Room Temperature
- Effective Creation of Spin Polarization in p-Type Ge from a Fe/GeO