スポンサーリンク
Sophia Univ. Tokyo Jpn | 論文
- Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy
- Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
- Characteristics of Brown Forest Soils Developed under Beech Forests in the Kinki and the Tohoku Districts with Special Reference to Their Pedogenetic Processes
- Effect of Heavy Doping on Band Gap and Minority Carrier Transport of AlGaAs/GaAs HBT's (SOLID STATE DEVICES AND MATERIALS 1)
- Three-Dimensional Quantum Percolation Studied by Level Statistics
- Atomic-Resolution X-Ray Fluorescence Holography of Zn(0.02wt%)in a GaAs Wafer
- InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
- Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
- High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
- High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
- InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
- InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
- Analysis of Contamination Layer of InP During LPE Process by Synchrotron Radiation-Excited X-Ray Fluorescence : Surfaces, Interfaces and Films
- Chemical State Mapping by X-Ray Fluorescence Using Absorption Edge Shifts : Techniques, Instrumentations and Measurement
- Characterization of Co-O Thin Films by X-Ray Fluorescence Using Chemical Shifts of Absorption Edges
- A Scanning X-Ray Fluorescence Microprobe with Synchrotron Radiation