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Sony Corporation Research Center | 論文
- Resonant Tunneling Spectroscopy of Sidewall-Confined States and Impurity-Bound States Using AlGaAs-GaAs Triple-Barrier Diodes
- SiN_x:H/SiO_2 Double-Layer Passivation With Hydrogen-Radical Annealing For Solar Cells
- Modification Effect of a-Si_ N_x:H Surface by Hydrogen Radicals
- Laser Patterning Method for Integrated Type a-Si Solar Cell Submodules
- Room-Temperature Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- RT Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- CH_3 Radical Density in Electron Cyclotron Resonance CH_3OH and CH_3OH/H_2 Plasmas
- ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer
- ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions
- 491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode with a Low Operating Voltage
- Highly Accurate CO_2 Gas Sensor Using a Modulation-Type Pyroelectric Infrared Detector
- AlGaInP Visible Semiconductor Lasers : COMPONENTS
- Modulation Type Pyroelectric IR Detector
- Preparation and Properties of a-SiGe:H:F Films by a Glow Discharge Decomposition
- Formation of p^+-layer in GaAs by dual implantation of Zn and As
- Redistrubution of Zn Implanted into GaAs
- A 380H × 488V CCD Imager with Narrow Channel Transfer Gates : A-7: OTHER SILICON DEVICES
- Estimation of Reactivity of Isocyanate Groups by Calculation and Magnetochemical Measurement
- Polymer-C_ Composite with Ferromagnetism
- Evaluation of CF_2 Radical as a Precursor for Fluorocarbon Film Formation in Highly Selective SiO_2 Etching Process Using Radical Injection Technique