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Silicon Nano Device Lab (SNDL), ECE Department, National University of Singapore | 論文

• Study of Mobility in Strained Silicon and Germanium Ultra Thin Body MOSFETs
• Dynamic Bias-Temperature Instability in Ultrathin SiO_2 and HfO_2 Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime
• A Physical Model for Hole Direct Tunneling Currents Through Ultrathin Gate Dielectrics in Advanced CMOS Devices
• Dynamic Bias-Temperature Instability in Ultrathin SiO2 and HfO2 Metal-Oxide-Semiconductor Field Effect Transistors and Its Impact on Device Lifetime

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