スポンサーリンク
Sensor Electronic Technology Inc. | 論文
- AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor : Semiconductors
- 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes
- Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes : Semiconductors
- Large Chip High Power Deep Ultraviolet Light-Emitting Diodes
- 247 nm Ultra-Violet Light Emitting Diodes
- Physics of GaN Based Electronic Devices
- Simulation of AlGaN/GaN Heterostructure Field Effect Transistors
- Physics of AlGaN/GaN Electronic and Photonic Devices
- AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
- AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
- AlGaN Deep-Ultraviolet Light-Emitting Diodes
- 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes