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Semiconductor group, TOSHIBA CORPORATION | 論文
- Mechanism of Etch Stop in High Aspect-Ratio Contact Hole Etching
- ESR Study of MOSFET Characteristics Degradation Mechanism by Water in Intermetal Oxide (Special Issue on LSI Failure Analysis)
- Special and Embedded Memory Macrocells for Low-Cost and Low-Power in MPEG Environment (Special Issue on ULSI Memory Technology)
- Resist and Sidewall Film Rermoval after AT Reactive Ion Etching (RIE) Employing F+H_2O Downstream Ashing
- Influence of Al Surface Modification on Selectivity in Via-Hole Etching Employing CHF_3 Plasma
- A Symbolic Analysis Method Using Signal Block Diagrams and Its Application to Bias Synthesis of Analog Circuits (Special Section on the 6th Karuizawa Workshop on Circuits and Systems)