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Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn | 論文
- Impact of high temperature annealing on traps in physical-vapor-deposited-TiN/SiO2/Si analyzed by positron annihilation
- Heterogeneous Particle Formation during Low Pressure Etching of Silicon Dioxide
- One-Laser-Two-Beam Method for Double Overwrite Speed in Rewritable Phase-Change Optical Discs
- Analyses of Signals from Dual-Layer Phase Change Optical Disks
- GeSbTe Phase Change Material for Blue-Violet Laser at High Linear Speed
- Feasibility of High-Data-Rate Media with Ge-Sb-Te Phase-Change Material
- Growth and Characterization of Ferroelectric Pb(Zr, Ti)O_3 Films on Interface-Controlled CeO_2(111)/Si(111) Structures
- Microwave Dielectric Characteristics of the Ca_Sm_TiO_3-Li_Nd_TiO_3 Ceramics
- Effect of BaO/WO_3 on the Microwave Loss Quality of Ba(Mg_Ta_)O_3
- Microwave Dielectric Properties and Far Infrared Reflectivity Spectra of the (Zr_Sn_)TiO_4 Ceramics with Additives
- Dielectric Properties of Ca_Sm_TiO_3-Li_TiO_3 Ceramics
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Frequency Dependence of Nonlinear Susceptibility of Methyl Orange Embedded in Poly(vinyl alcohol) Matrix : Two-Wave Mixing Study
- Direct Observation of Helical Polysilane Nanostructures by Atomic Force Microscopy
- Room-Temperature Epitaxial Growth of CeO_2 Thin Films on Si(111) Substrates for Fabrication of Sharp Oxide/Silicon Interface
- Precise Mark Shape Control in Mark Length Recording on Magnetooptical Disk
- Read Channel and Format for High-Density Magneto-Optical Disk System
- Ultrashallow Junction Formation Using Low-Temperature Selective Si_Ge_x Chemical Vapor Deposition
- Fabrication of a Si_Ge_x Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition
- 2 GB/130 mm Capacity Direct-Overwrite Magneto-Optical Disk