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Semiconductor Engineering Department, Tokyo shibaura Electric Co., Ltd. | 論文
- On the Distribution of Impurities in Epitaxial Silicon Films
- Redistribution of Diffused Boron in Silicon by Thermal Oxidation
- Non-Destructive Determination of Impurity Concentration in Silicon Epitaxial Layer Using Metal-Silicon Schottky Barrier
- Electron Spin Resonance in SiO_2 Grown on Silicon
- P-Channel versus N-Channel in MOS-ICs of Submicron Channel Lengths : A-2: MOS DEVICES/BASIC ASPECTS
- Non-Destructive Measurement of Surface Concentrations and Junction Depths of Diffused Semiconductor Layers
- Determination of Impurity Distribution in Silicon Epitaxial Film Using MOS Capacitor
- Charge Transport Phenomena in MOS System