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Semiconductor Device Research Center, Matsushita Electronics Corporation | 論文
- Low Power Dissipation Single-Supply MMIC Power Amplifier for 5.8 GHz Electronic Toll Collection System (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Low-Power Technology for GaAs Front-End ICs
- Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition
- A High Performance Downconverter MMIC for DBS Applications
- 0.15-μm T-Shaped Gate MODFETs Using BCB as Low-k Spacer (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- 200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates
- K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W