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Science And Engineering Kyoto University:(present Address) Graduate School Of Materials Science Nara | 論文

• Hetero-Interface Properties of SiO_2/4H-SiC on Various Crystal Orientations(Heterostructure Microelectronics with TWHM2003)
• Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
• High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
• High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
• Effects of Cell-Cell Interaction on the mRNA Level of Glyoxalase I Gene in Saccharomyces cerebisiae
• Deep Interface States in SiO_2/p-type α-SiC Structure

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