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SONY Corporation Research Center | 論文
- Composition Modulation in Quantum Wire Structures on Vicinal (110) GaAs Studied by Photoluminescence
- Spectral and Spatial Behavior of Raman Scattering and Photoluminescence from Porous Silicon
- Ru-NMR Studies and Specific Heat Measurements of Bi_3Ru_3O_ and La_4Ru_6O_ (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Transmission Electron Microscopic Observation of Microdefectsin Zn^+ : Implanted GaAs
- Knoop Hardness of Phosphorus-Diffused Silicon Single Crystals
- X-Ray Observation of Dislocations in Mn-Zn Ferrite
- Influence of Preoxidation Annealing on Stacking Fault Generation Due to Mechanical Damage on Silicon Surfaces
- Formation of Gallium Nitride at the Interface between Silicon Nitride Encapsulant and Ion Implanted GaAs
- X-Ray Topographic Images of Oxidation-Induced Frank Sessile Dislocation Loops in Thin Silicon
- Structural Change of Oxidation-Induced Frank Sessile Dislocation Loops in Silicon
- Scanning Electron Microscopic Observation of Oxidation-Induced Stacking Faults in Silicon
- X-ray Observation of Conversion of Faulted Loops to Prismatic Loops in Silicon
- Control of Oxidation-Induced Stacking Faults in Silicon by Chlorine Implantation
- Microbial community Structure Analysis of Euxinic Sediments Using Phospholipid Fatty Acid Biomarkers
- Injection Luminescence in ZnTe Diodes
- Preparation and Photovoltaic Characteristics of a-Si Solar Cells Produced by a Consecutive, Separated Reaction Chamber Method : III-2: AMORPHOUS SOLAR CELLS (1) : Proparation Process
- ^Co-NMR Knight Shift of Superconducting Na_xCoO_H_2O (Condensed Matter: Electric Structure, Electrical, Magnetic and Optical Properties)
- ^Co NQR Study on Superconducting Na_xCoO_2・yH_2O
- ^Co NQR Study on Superconducting Na_xCoO_2・yH_2O
- Threshold Voltage Uniformity of GaAs-FETs on Ingot-Annealed Substrates