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SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A. | 論文

• High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2 High-$k$ Dielectric and Metal Gate
• Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide
• Dominant Device Instability Mechanism in Scaled Metal–Oxide–Semiconductor Field-Effect Transistors with Hafnium Oxide Dielectric
• Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors
• Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric
• Extreme Ultraviolet Lithography Development in the United States

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