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Research and Development Center, Sumitomo Sitix Corporation | 論文
- Atomic force Microscope Observation of the Change in Shape and Subsequent Disappearance of "Crystal-Originated Particles" after Hydrogen-Atmosphere Thermal Annealing
- A New Method for Transmission Electron Microscope Observation of Grown-in Defects in As-Grown Czochralski Silicon (111) Crystals
- Dependence of Grown-in Defect Behavior on Oxygen Concentration in Czoehralski Silicon Crystals
- Slip Length in Silicon Wafers Caused by Indentation during Heat Treatment
- Pinning Effect on Punched-Out Dislocations in Silicon Wafers Investigated Using Indentation Method
- Effect of Oxide Precipitate Sizes on the Mechanical Strength of Czochralski Silicon Wafers