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Research Institutefor Polymers And Textiles | 論文
- Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications (Special Issue on Microwave and Millimeter Wave Technology)
- A Self-Aligned Gate AlGaAs/GaAs Heterostructure Field-Effect Transistor with an Ion-Implanted Buried-Channel for use in High Efficiency Power Amplifiers
- A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs (Special Issue on Low-Power and High-Speed LSI Technologies)
- Nonlinear Conductivity of Poly(3-methylthiophene) under a Low Electric Field in the Low Frequency Range : Electrical Properties of Condensed Matter
- Photoconduction in Poly(p-Phenylene Sulfide) Films near the Absorption Edge : Chemistry (incl. physical process)
- Spectral Distribution of Photocurrent near the Absorption Edge : Optical Properties of Condensed Matter