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Research Institute of Electronics | 論文
- Mechanism of Plasma Assisted a-SiC:H Film Deposition
- Variation of Stress and Hardness of a-Sic:H Films with Film Composition
- Remote Plasma SiO_2 Deposition by Tetraethoxysilane with Chemically and Energetically Different Atomic Species
- Photoluminescent Properties of a-SiC:H Films Deposited by Organosilanes in Remote H2 Plasma
- Superiority of O(^1D) atom for solid and gas phase reactions over O(^3P) atom
- Properties of Atomic Oxygen obtained from Thermodynamically Non-equilibrium High Temperature Plasma
- A Switched-Capacitor Capacitance Bridge Based on the Two-Step Quantization
- A Clock-Feedthrough and Offset Compensated Fully-Differential Switched-Current Circuit
- Accurate Determinatuon of Microwave Conductivity by Means of Cavity Coupling Coefficient Measurement
- A Temperature Controller With Self Tuning Proportional-Integral-Derivative Algorithm
- Internet Connection Architecture of Environment Monitors
- A Zero-Voltage-Switching Quasi-Resonant Flyback and Forward Composite DC-DC Converter
- Room-Temperature Mid-Infrared Light-Emitting Diodes from Liquid-Phase Epitaxial InAs/InAs0.89Sb0.11/InAs0.80P0.12Sb0.08 Heterostructures