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Research Institute of Electronics, Shizuoka University | 論文
- Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
- Effect of UV/ozone Treatment of Nanogap Electrodes for Molecular Devices
- Artificial Dislocation Network in Silicon-on-Insulator Layer for Single-Electron Devices
- Seebeck Coefficient of Ultrathin Silicon-on-Insulator Layers
- A column-parallel Cyclic ADC with 4bit fronted gain stage for low-noise wide dynamic range CMOS image sensors (情報センシング)
- Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- Evalution of CMOS Time-of-Flight Range Image Sensor with Gates-on-Field-Oxide Structure
- Measurements of Electronic Transport Properties of Single-Walled Carbon Nanotubes Encapsulating Alkali-Metals and C_ Fullerenes via Plasma Ion Irradiation
- A Field-Effect Transistor with a Deposited Graphite Thin Film
- Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
- Fabrication of double-dot single-electron transistor in silicon nanowire
- Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
- Fabrication of double-dot single-electron transistor in silicon nanowire
- Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors
- Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- A Study of Cr-Al Oxides for Single-Layer Halftone Phase-Shifting Masks for Deep-Ultraviolet Region Photolithography
- The Application of Silicon Rich Nitride Films for Use as Deep-Ultraviolet Lithography Phase-Shifting Masks
- Preparation of aluminum oxide films at low temperatures by a hot wall technique
- Dependence of Cathodoluminescent and Electrical Properties of Phosphors with Conducting Layer by Sol-Gel Method on Layer Thickness
- Effect of temperature on the formation of ZnS nanostructures and properties (シリコン材料・デバイス)