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RIKEN Harima Institute | 論文
- PURIFICATION AND CHARACTERIZATION OF HEXA-HISTIDINE TAGGED CYTOCHROME bc_1 COMPLEX FROM Rhodobacter capsulatus
- IDENTIFICATION OF LYS RESIDUES ON THE EXTRINSIC 33KDA PROTEIN INVOLVED IN ELECTROSTATIC INTERACTION WITH PSII COMPLEX BY CHEMICAL MODIFICATION WITH NSP
- 3P-065 単分子X線回折像からの立体構造決定法の理論的研究(蛋白質・計測,解析の方法論,第46回日本生物物理学会年会)
- 2P024 紫外可視分光法によるタンパク質結晶の放射線損傷評価(蛋白質-構造,第48回日本生物物理学会年会)
- 2P024 Suggestions for improving diffraction data qualities at the undulator beamlines(29. Protein structure and dynamics (II),Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
- Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
- The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
- Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
- Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
- Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
- Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
- Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
- Study of 4p Electronic States Related to Magnetic Phase Transition in Mn_3MC (M=Zn and Ga) by X-ray Magnetic Circular Dichroism(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures
- GroEL-基質蛋白質複合体のX線溶液散乱
- 2P271 Structural investigation on highly asymmetric sphingomyelin (C24:0 SM) bilayers(40. Membrane structure,Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
- Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
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