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Process Development Dept. Wafer Process Engineering Development Div. Lsi Manufacturing Unit Renesas | 論文
- Control of nitrogen profile in radical nitridation of SiO_2 films
- Layout-Independent Transistor with Stress-Controlled and Highly Manufacturable Shallow Trench Isolation Process
- Control of Nitrogen Depth Profile near Silicon Oxynitride/Si(100) Interface Formed by Radical Nitridation
- Control of Nitrogen Depth Profile and Chemical Bonding State in Silicon Oxynitride Films Formed by Radical Nitridation