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Optoelectronics Technology Research Laboratory | 論文
- Polarization Insensitive Wavelength Conversions by a LiNbO_3 Waveguide Using a Multi-Ring Configuration
- Broadband Multichannel Wavelength Conversions for Optical Communication Systems Using Quasiphase Matched Difference Frequency Generation
- Electron Localization due to Symmetry Breaking in Nonlinear Coupled-Quantum Systems
- ac Field-Induced Localization of an Electron in a Double-Well Quantum Structure
- Initial Growth Mechanism of Si on GaAs Studied by Reflection High-Energy Electron Diffraction Oscillations
- Initial Growth Mechanism of GaAs on Si(110)
- Step Structures and Terrace Width Ordering of Molecular Beam Epitaxially Grown GaAs Surfaces Observed by Scanning Tunneling Microscopy
- In Situ Characterization of the Initial Growth Stage of GaAs on Si by Coaxial Impact-Collision Ion Scattering Spectroscopy
- Real-Time Observation of AlAs/GaAs Superlattice Growth by Coaxial Impact Collision Ion Scattering Spectroscopy
- Reduction of Dislocation Density in GaAs on Si Substrate by Si Interlayer and Initial Si Buffer Layer
- In Situ Analysis of Gallium Arsenide Surfaces by Coaxial Impact Collision Ion-Scattering Spectroscopy with an Off-Axis Ion Source
- A Second-Harmonic Generation Study Applied to Sulfur Passivation and Photochemical Washing of GaAs Surfaces
- Electrical Characterization of Au/p-ZnSe Structure
- Gas Source Molecular Beam Epitaxial Growth of ZnSe Using Metal Zn and H_2Se
- Blue Light Emitting Laser Diodes Based on ZnSe/ZnCdSe Structure Grown by Gas Source Molecular Beam Epitaxy
- Active-Nitrogen-Doped P-Type ZnSe Grown by Gas-Source Molecular Beam Epitaxy for Blue-Light-Emitting Devices
- Effect of Alloy Scattering on Electron and Hole Impact Ionization Rates in Ga_In_xAs_yP_ Alloy System
- Analysis of Impact Ionization Phenomena in InP by Monte Carlo Simulation
- Strain Relaxation Processes in GaAs on Si by Two Groups of Misfit Dislocations
- Growth and Characterization of GaAs/GaSe/Si Heterostructures