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Optoelectronics Oki Laboratory Real World Computing Partnership C/o Semiconductor Technology Laborat | 論文
- A New Method for Atomic-Layer-Controlled Molecular Beam Epitaxy of GaAs Exploiting the Desorption of the Excess Ga Atoms
- The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine
- Enhancement of Quantum-Confined Stark Effect in GaAs-AlGaAs Quantum Wells by Quantization along the [111] Axis
- Wafer Bonding of InP to Si and Its Application to Optical Devices