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Ntt Photonics Lab. Kanagawa Jpn | 論文
- Substrate Dependence of Laser-Induced Damage Threshold of Scandium Oxide High-Reflector Coatings for UV Pulsed Laser
- Influence of Deposition Parameters on Laser Damage Threshold of 355-nm Scandium Oxide-Magnesium Fluoride High-Reflector Coatings
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Temperature Dependence of the Viscosity of Molten Silicon Measured by the Oscillating Cup Method
- Temperature Dependence of the Electrical Resistivity of Molten Silicon
- Effect of Gallium Addition on Density Variation of Molten Silicon
- Surface Tension Variation of Molten Silicon Measured by the Ring Method
- Density Variations in Molten Silicon Dependent on Its Thermal History
- Density Variation of Molten Silicon Measured by an Improved Archimedian Method
- Measurement of Time Lag of Electrical Breakdown in Polymethylmathacrylate under Highly Non-Uniform Field Using Nanosecond Pulse Voltage
- Exclusive OR/NOR IC for 40-Gbit/s Clock Recovery Circuit (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Electrical Breakdown at the Falling Edge of Rectangular Pulse Voltage Curve in Cyclohexane under Nonuniform Field Configuration
- Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs
- Ultrahigh-Speed Integrated Circuits Using InP-Based High-Electron-Mobility Transistors(HEMTs)
- Fundamental oscillations at 〜900 GHz with low bias voltages in RTDs having spike-doped structures(Session 3A : Emerging Device Technology 2)
- Influence of the Optical Purity on the Smectic Layer Thickness and the Transition Order in Enantiomeric Mixtures of an Antiferroelectric Liquid Crystal
- First Order Paraelectric-Antiferroelectric Phase Transition in a Chiral Smectic Liquid Crystal of a Fluorine Containing Phenyl Pyrimidine Derivative
- Conformal Platinum Electrodes Prepared by Chemical Vapor Deposition Using a Liquid MeCpPtMe_3 Precursor in an Oxidizing Atmosphere